Estimation of drift mobility in InGaAsP semiconducting alloys from photoluminescence at 77 and 300K

In this work we propose a method of calculation for estimating the drift mobility from photoluminescence. The method is based on the difference between the temperature of the scattered carriers after thermalization and the lattice temperature. The effective carrier temperature TE was determined experimentally by fitting the high-energy region of photoluminescence spectra. The total mobility is obtained from the mobility calculated for different scattering mechanisms and the application of the Matthiessen rule. The method was used on InGaAsP semiconducting alloys grown by liquid phase epitaxy. The calculated mobility values for different InGaAsP samples agree with those reported for these alloys.